Datasheet

IRFH5304PbF
2 www.irf.com
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
––– 2.7
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θJA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒ
V
DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.8 4.5
––– 5.8 6.8
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
Δ
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 5.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 88 ––– ––– S
Q
g
Total Gate Charge ––– 41 ––– nC
Q
g
Total Gate Charge ––– 16 24
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.7 –––
Q
gd
Gate-to-Drain Charge ––– 5.8 –––
Q
godr
Gate Charge Overdrive ––– 3.9 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 8.5 –––
Q
oss
Output Charge ––– 9.8 ––– nC
R
G
Gate Resistance ––– 1.2
–––
Ω
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 25 –––
t
d(off)
Turn-Off Delay Time ––– 12 –––
t
f
Fall Time ––– 6.6 –––
C
iss
Input Capacitance ––– 2360 –––
C
oss
Output Capacitance ––– 510 –––
C
rss
Reverse Transfer Capacitance ––– 220 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.71 ––– V
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 19 29 ns
Q
rr
Reverse Recovery Charge ––– 44 66 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 50μA
A
79
––– ––– 320
––– –––
nA
ns
pF
nC
Conditions
See Fig.15
Max.
46
47
ƒ = 1.0MHz
V
DS
= 15V
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 47A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 47A
V
GS
= 0V
V
DS
= 10V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
GS
= 10V, V
DS
= 15V, I
D
= 49A
T
J
= 25°C, I
F
= 47A, V
DD
= 15V
di/dt = 300A/μs
T
J
= 25°C, I
S
= 5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 47A, V
GS
= 0V
V
GS
= 4.5V, I
D
= 47A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8Ω
V
DS
= 15V, I
D
= 47A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
mΩ
μA
I
D
= 47A