Datasheet

IRFH5302DPbF
2 www.irf.com
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
––– 1.2
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θJA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– -0.25 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.0 2.5
––– 3.1 3.7
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
V
DS
= V
GS
, I
D
= 100µA
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 500
µA
––– ––– 5.0
mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 110 ––– ––– S
Q
g
Total Gate Charge ––– 55 ––– nC
Q
g
Total Gate Charge ––– 26 39
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.2 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 4.0 –––
Q
gd
Gate-to-Drain Charge ––– 7.9 –––
Q
godr
Gate Charge Overdrive ––– 7.9 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 11.9 –––
Q
oss
Output Charge ––– 19 ––– nC
R
G
Gate Resistance ––– 1.9
–––
Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time –––30–––
t
d(off)
Turn-Off Delay Time ––– 20 –––
t
f
Fall Time –––12–––
C
iss
Input Capacitance ––– 3635 –––
C
oss
Output Capacitance ––– 680 –––
C
rss
Reverse Transfer Capacitance ––– 260 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
gy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage ––– ––– 0.65 V
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 19 29 ns
Q
rr
Reverse Recovery Charge ––– 28 42 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 15V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 400
––– ––– 100
Conditions
V
GS
= 0V, I
D
= 500µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 50A
V
DS
= 24V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
V
GS
= 10V, V
DS
= 15V, I
D
= 50A
V
GS
= 0V
V
DS
= 25V
Conditions
Max.
130
50
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 50A, V
DD
= 15V
di/dt = 300A/µs
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
V
GS
= 4.5V, I
D
= 50A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8Ω
V
DS
= 15V, I
D
= 50A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
m
Ω
I
D
= 50A
I
D
= 50A