Datasheet

IRFH5255PbF
2 www.irf.com
S
D
G
Th
erma
l R
es
i
stance
Parameter Typ. Max. Units
R
θ
JC
(Bottom)
Junction-to-Case
––– 4.9
R
θ
JC
(Top)
Junction-to-Case
––– 15
°C/W
R
θJA
Junction-to-Ambient
––– 35
R
θ
JA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.0 6.0
––– 8.8 10.9
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 5
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 48 ––– ––– S
Q
g
Total Gate Charge ––– 14.5 ––– nC
Q
g
Total Gate Charge ––– 7.0 11
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 1.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.2 –––
Q
gd
Gate-to-Drain Charge ––– 2.7 –––
Q
godr
Gate Charge Overdrive ––– 1.5 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 3.8 –––
Q
oss
Output Charge ––– 6.0 ––– nC
R
G
Gate Resistance ––– 0.6
–––
Ω
t
d(on)
Turn-On Delay Time ––– 7.9 –––
t
r
Rise Time ––– 10.7 –––
t
d(off)
Turn-Off Delay Time ––– 6.5 –––
t
f
Fall Time ––– 3.8 –––
C
iss
Input Capacitance ––– 988 –––
C
oss
Output Capacitance ––– 289 –––
C
rss
Reverse Transfer Capacitance ––– 127 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
gy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 11 17 ns
Q
rr
Reverse Recovery Charge ––– 7.8 12 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
V
DS
= 13V
–––
V
GS
= 20V
V
GS
= -20V
––– ––– 60
––– ––– 51
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
Conditions
See Fig.15
Max.
53
15
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 15A, V
DD
= 13V
di/dt = 300A/µs
T
J
= 25°C, I
S
= 15A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
–––
R
G
=1.0
Ω
V
DS
= 13V, I
D
= 15A
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
µA
I
D
= 15A
I
D
= 15A
V
GS
= 0V
V
DS
= 13V
V
DS
= 20V, V
GS
= 0V
V
DS
= V
GS
, I
D
= 25µA
V
GS
= 4.5V, I
D
= 15A
V
GS
= 4.5V
Typ.
m
Ω
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
V
GS
= 10V, V
DS
= 13V, I
D
= 15A