Datasheet

IRFH5206PbF
2 www.irf.com
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
––– 1.2
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θJA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 22
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 5.6 6.7
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -9.7 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 73 ––– ––– S
Q
g
Total Gate Charge ––– 40 60
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.2 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.4 –––
Q
gd
Gate-to-Drain Charge ––– 12 –––
Q
godr
Gate Charge Overdrive ––– 18.4 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 15.4 –––
Q
oss
Output Charge ––– 14 ––– nC
R
G
Gate Resistance ––– 1.7
–––
Ω
t
d(on)
Turn-On Delay Time ––– 6.4 –––
t
r
Rise Time ––– 11 –––
t
d(off)
Turn-Off Delay Time ––– 22 –––
t
f
Fall Time ––– 8.2 –––
C
iss
Input Capacitance ––– 2490 –––
C
oss
Output Capacitance ––– 360 –––
C
rss
Reverse Transfer Capacitance ––– 160 –––
A
va
l
anc
h
e
Ch
arac
t
er
i
s
ti
cs
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
Di
o
d
e
Ch
arac
t
er
i
s
ti
cs
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 26 39 ns
Q
rr
Reverse Recovery Charge ––– 110 165 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 100μA
A
89
––– ––– 350
––– –––
nA
ns
50
ƒ = 1.0MHz
V
DS
= 30V
–––
Typ.
–––
R
G
=1.8
Ω
pF
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 50A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 10V
I
D
= 50A
V
GS
= 0V
V
DS
= 25V
Conditions
See Fig.15
Max.
87
T
J
= 25°C, I
F
= 50A, V
DD
= 30V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 25V, I
D
= 50A
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
μA
I
D
= 50A
V
GS
= 20V
V
GS
= -20V
V
DS
= 60V, V
GS
= 0V
nC
V
GS
= 10V