Datasheet

IRFH5020PbF
2 www.irf.com
S
D
G
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(Bottom)
Junction-to-Case
––– 0.5
R
θJC
(Top)
Junction-to-Case
––– 15
°C/W
R
θJA
Junction-to-Ambient
––– 35
R
θJA
(<10s)
Junction-to-Ambient
––– 21
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.02 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 47 55
m
Ω
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
μA
––– ––– 1.0
mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 18 ––– ––– S
Q
g
Total Gate Charge ––– 36 54
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.1 –––
Q
gd
Gate-to-Drain Charge ––– 11 –––
Q
godr
Gate Charge Overdrive ––– 14 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 13 –––
Q
oss
Output Charge ––– 13 ––– nC
R
G
Gate Resistance ––– 1.9
–––
Ω
t
d(on)
Turn-On Delay Time ––– 9.3 –––
t
r
Rise Time ––– 7.7 –––
t
d(off)
Turn-Off Delay Time ––– 21 –––
t
f
Fall Time ––– 6.0 –––
C
iss
Input Capacitance ––– 2290 –––
C
oss
Output Capacitance ––– 120 –––
C
rss
Reverse Transfer Capacitance ––– 33 –––
A
va
l
anc
h
e
Ch
arac
t
er
i
s
ti
cs
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
g
y
mJ
I
AR
Avalanche Current
A
Di
o
d
e
Ch
arac
t
er
i
s
ti
cs
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 46 69 ns
Q
rr
Reverse Recovery Charge ––– 97 150 nC
t
on
Forward Turn-On Time Time is dominated by parasitic Inductance
V
DS
= V
GS
, I
D
= 150μA
A
7.5
––– ––– 63
––– –––
nA
ns
–––
Typ.
–––
R
G
=1.8
Ω
pF
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.5A
Conditions
See Fig.15
Max.
320
7.5
ƒ = 1.0MHz
di/dt = 500A/μs
T
J
= 25°C, I
S
= 7.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 200V, V
GS
= 0V
nC
V
GS
= 10V
T
J
= 25°C, I
F
= 7.5A, V
DD
= 100V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 100V, V
GS
= 10V
I
D
= 7.5A
V
GS
= 0V
V
DS
= 100V
V
DS
= 50V, I
D
= 7.5A
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
I
D
= 7.5A
V
GS
= 20V
V
GS
= -20V
V
DS
= 100V