Datasheet

IRFB9N65A
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 10 20 30 40 50
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
5.2A
V = 130V
DS
V = 325V
DS
V = 520V
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
10 100 1000 10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Sin
g
le Pulse
T
T
= 150 C
= 25 C
°
°
J
C
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
400V
0
400
800
1200
1600
2000
1 10 100 1000
C, Capacitance (pF)
DS
V , Drain-to-Source Volta
g
e
(
V
)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss
g
s
g
d ds
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g
d
oss ds
g
d
C
iss
C
oss
C
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