Datasheet


IRFB7545PbF
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback November 5, 2014
Absolute Maximum Rating
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 95
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 67
A
I
DM
Pulsed Drain Current  380

P
D
@T
C
= 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 0.83 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175 
°C 
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Avalanche Characteristics
Symbol
Parameter
Max. Units
E
AS (Thermally limited)
Single Pulse Avalanche Energy 
140
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy 
235

I
AR
Avalanche Current 
See Fig 15, 16, 23a, 23b
A
E
AR
Repetitive Avalanche Energy  mJ
Thermal Resistance 
Symbol Parameter Typ. Max. Units
R

JC
Junction-to-Case 
––– 1.21
°C/W 
R

CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R

JA
Junction-to-Ambient
––– 62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 46 ––– mV/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 4.9 5.9
m
V
GS
= 10V, I
D
= 57A 
V
GS(th)
Gate Threshold Voltage 2.1 ––– 3.7 V V
DS
= V
GS
, I
D
= 100µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 150 V
DS
= 60V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
R
G
Gate Resistance ––– 2.3 –––

––– 6.3 –––

V
GS
= 6.0V, I
D
= 29A 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by T
Jmax
, starting T
J
= 25°C, L = 88µH, R
G
= 50, I
AS
= 57A, V
GS
=10V.
I
SD
 57A, di/dt  810A/µs, V
DD
 V
(BR)DSS
, T
J
175°C.
Pulse width  400µs; duty cycle  2%.
 C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
 C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
 R

is measured at T
J
approximately 90°C.
 Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V.