Datasheet

3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

IRFB7446PbF
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 269 ––– ––– S V
DS
= 10V, I
D
=70A
Q
g
Total Gate Charge ––– 62 93
I
D
= 70A
Q
gs
Gate-to-Source Charge ––– 16 ––– V
DS
= 20V
Q
gd
Gate-to-Drain Charge ––– 20 ––– V
GS
= 10V
Q
sync
Total Gate Charge Sync. (Qg– Qgd) ––– 42 –––
t
d(on)
Turn-On Delay Time ––– 11 –––
ns
V
DD
= 20V
t
r
Rise Time ––– 34 ––– I
D
= 30A
t
d(off)
Turn-Off Delay Time ––– 33 –––
R
G
= 2.7
t
f
Fall Time ––– 23 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 3183 –––
pF 
V
GS
= 0V
C
oss
Output Capacitance ––– 475 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 331 –––
ƒ = 1.0MHz, See Fig.5
C
oss eff.(ER)
Effective Output Capacitance
(Energy Related)
––– 596 ––– V
GS
= 0V, VDS = 0V to 32V
C
oss eff.(TR)
Output Capacitance (Time Related) ––– 688 ––– V
GS
= 0V, VDS = 0V to 32V
Diode Characteristics 
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 120
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 492
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.9 1.3 V T
J
= 25°C,I
S
= 70A,V
GS
= 0V 
dv/dt Peak Diode Recovery dv/dt ––– 7.6 ––– V/ns T
J
= 175°C,I
S
= 70A,V
DS
= 40V
t
rr
Reverse Recovery Time
––– 22 –––
ns
T
J
= 25°C V
DD
= 34V
––– 24 ––– T
J
= 125°C I
F
= 70A,
Q
rr
Reverse Recovery Charge
––– 15 –––
nC
T
J
= 25°C di/dt = 100A/µs 
––– 15 ––– T
J
= 125°C 
I
RRM
Reverse Recovery Current ––– 1.0 ––– A
T
J
= 25°C 
nC 
D
S
G