Datasheet

2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 7, 2014

IRFB7446PbF
Absolute Maximum Rating
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 123
A 
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 87
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 120
I
DM
Pulsed Drain Current  492
P
D
@T
C
= 25°C Maximum Power Dissipation 99 W
Linear Derating Factor 0.66 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175 
°C 
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Avalanche Characteristics
E
AS
Single Pulse Avalanche Energy 
111
mJ
E
AS (L=1mH)
Single Pulse Avalanche Energy 
236
I
AR
Avalanche Current 
See Fig 15, 16, 23a, 23b
A
E
AR
Repetitive Avalanche Energy  mJ
Thermal Resistance 
Symbol Parameter Typ. Max. Units
R

JC
Junction-to-Case 
––– 1.52
°C/W 
R

CS
Case-to-Sink, Flat Greased Surface
0.50 –––
R

JA
Junction-to-Ambient 
––– 62
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, I
D
= 5mA 
R
DS(on)
––– 2.6 3.3
m
V
GS
= 10V, I
D
= 70A 
––– 3.9 ––– V
GS
= 6.0V, I
D
= 35A 
V
GS(th)
Gate Threshold Voltage 2.2 3.0 3.9 V V
DS
= V
GS
, I
D
= 100µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA
V
DS
=40 V, V
GS
= 0V
––– ––– 150 V
DS
=40V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
R
G
Gate Resistance ––– 1.6 –––

Static Drain-to-Source On-Resistance
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)
 Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.046mH,R
G
= 50, I
AS
= 70A, V
GS
=10V.
 I
SD
 70A, di/dt  1174A/µs, V
DD
 V
(BR)DSS
, T
J
 175°C.
 Pulse width  400µs; duty cycle  2%.
 C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
 C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while VDS is rising from 0 to 80% V
DSS
.
 R

is measured at T
J
approximately 90°C.
 This value determined from sample failure population, starting T
J
= 25°C, L= 1mH, R
G
= 50, I
AS
= 22A, V
GS
=10V.
* Halogen -Free since April 30, 2014