Datasheet

3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014
IRFB7434PbF
S
D
G
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 211 ––– ––– S
Q
g
Total Gate Charge ––– 216 324
Q
gs
Gate-to-Source Charge ––– 51 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 77 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 139 –––
t
d(on)
Turn-On Delay Time ––– 24 –––
t
r
Rise Time ––– 68 –––
t
d(off)
Turn-Off Delay Time ––– 115 –––
t
f
Fall Time ––– 68 –––
C
is s
Input Capacitance ––– 10820 –––
C
oss
Output Capacitance ––– 1540 –––
C
rss
Reverse Transfer Capacitance ––– 1140 –––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
––– 1880 –––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
––– 2208 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.9 1.3 V
dv/dt Peak Diode Recovery
–––
5.0
–––
V/ns
t
rr
Reverse Recovery Time ––– 38 ––– T
J
= 25°C V
R
= 34V,
––– 37 ––– T
J
= 125°C I
F
= 100A
Q
rr
Reverse Recovery Charge ––– 50 ––– T
J
= 25°C
di/dt = 100A/μs
––– 50 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 1.9 ––– A T
J
= 25°C
A
ns
nC
317
–––
–––
–––
––– 1270
nC
ns
pF
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V , See Fig. 12
V
GS
= 0V, V
DS
= 0V to 32V
p-n junction diode.
MOSFET symbol
showing the
I
D
= 30A
R
G
= 2.7
Ω
Conditions
V
GS
= 10V
V
GS
= 0V
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
V
DD
= 20V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
integral reverse