Datasheet

IRFB4019PbF
2 www.irf.com
S
D
G
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T
J
= 25°C, L = 1.46mH, R
G
= 25Ω, I
AS
= 10A.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
 R
θ
is measured at T
J
of approximately 90°C.
 Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.19 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 80 95
m
Ω
V
GS(th)
Gate Threshold Voltage 3.0 ––– 4.9 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -13 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
g
fs
Forward Transconductance 14 ––– ––– S
Q
g
Total Gate Charge ––– 13 20
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.3 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 0.95 ––– nC
Q
gd
Gate-to-Drain Charge ––– 4.1 –––
Q
godr
Gate Charge Overdrive ––– 4.7 ––– See Fig. 6 and 19
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 5.1 –––
R
G(int)
Internal Gate Resistance ––– 2.4 ––– Ω
t
d(on)
Turn-On Delay Time ––– 7.0 –––
t
r
Rise Time ––– 13 –––
t
d(off)
Turn-Off Delay Time ––– 12 ––– ns
t
f
Fall Time ––– 7.8 –––
C
iss
Input Capacitance ––– 800 –––
C
oss
Output Capacitance ––– 74 ––– pF
C
rss
Reverse Transfer Capacitance ––– 19 –––
C
oss
Effective Output Capacitance ––– 99 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
@ T
C
= 25°C
Continuous Source Current ––– ––– 17
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 51
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 64 96 ns
Q
rr
Reverse Recovery Charge ––– 160 240 nC
––– 73
See Fig. 14, 15, 17a, 17b
I
D
= 10A
Typ. Max.
ƒ = 1.0MHz, See Fig.5
T
J
= 25°C, I
F
= 10A
di/dt = 100A/µs
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 10A
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 150V, V
GS
= 0V
V
GS
= 0V, V
DS
= 0V to 120V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V
I
D
= 10A
V
GS
= 0V
MOSFET symbol
R
G
= 2.4
Ω
V
DS
= 10V, I
D
= 10A
Conditions
and center of die contact
V
DD
= 75V, V
GS
= 10V
V
DS
= 75V
V
DS
= 50V