Datasheet

IRFB3256PbF
2 www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by T
Jmax
, starting T
J
= 25°C, L = 0.12mH
R
G
= 50Ω, I
AS
= 75A, V
GS
=10V. Part not recommended for use
above this value.
 I
SD
≤ 75A, di/dt ≤ 890A/μs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
 Pulse width ≤ 400μs; duty cycle ≤ 2%.
 C
oss
eff. (TR) is a fixed capacitance that gives the same charging
time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
S
D
G
 C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
 R
θ
is measured at T
J
approximately 90°C.
 R
θJC
value shown is at time zero.
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
60
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
29
–––
mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance
–––
2.7
3.4
m
Ω
V
GS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
88
–––
–––
S
R
G
Internal Gate Resistance
–––
0.79
–––
Ω
I
DSS
Drain-to-Source Leakage Current
–––
–––
20
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
130
195
nC
Q
gs
Gate-to-Source Charge
–––
31
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
42
–––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
)
–––
88
–––
t
d(on)
Turn-On Delay Time
–––
22
–––
ns
t
r
Rise Time
–––
77
–––
t
d(off)
Turn-Off Delay Time
–––
55
–––
t
f
Fall Time
–––
64
–––
C
iss
Input Capacitance
–––
6600
–––
pF
C
oss
Output Capacitance
–––
720
–––
C
rss
Reverse Transfer Capacitance
–––
400
–––
C
oss
eff. (ER)
Effective Output Capacitance (Energy Related)
–––
1080
–––
C
oss
eff. (TR)
Effective Output Capacitance (Time Related)
–––
1400
–––
Diode Characteristics
Symbol
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
206
A
(Body Diode)
I
SM
Pulsed Source Current
–––
–––
820
A
(Body Diode)
V
SD
Diode Forward Voltage
–––
–––
1.3
V
t
rr
Reverse Recovery Time
–––
43
–––
ns
T
J
= 25°C
V
R
= 51V,
–––
53
–––
T
J
= 125°C
I
F
= 75A
Q
rr
Reverse Recovery Charge
–––
58
–––
nC
T
J
= 25°C
di/dt = 100A/μs
–––
65
–––
T
J
= 125°C
I
RRM
Reverse Recovery Current
–––
2.4
–––
A
T
J
= 25°C
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
showing the
V
DS
= 30V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 48V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 48V , See Fig. 11
V
GS
= 0V, V
DS
= 0V to 48V
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150μA
V
DS
= 60V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
DS
= 25V, I
D
= 75A
I
D
= 75A
R
G
= 2.7
Ω
V
GS
= 10V
V
DD
= 39V
I
D
= 75A, V
DS
=0V, V
GS
= 10V
Conditions
I
D
= 75A
V
GS
= 20V
V
GS
= -20V