Datasheet

IRF9Z34N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 10203040
G
GS
A
-V , Gate-to-Source V oltage (V )
Q , Total Gate Charge (nC)
FOR TEST CIRCUIT
SEE FIGURE 13
I = -10A
V = -44V
V = -28V
D
DS
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
J
V = 0V
GS
SD
SD
A
-I , R everse D rain Current (A)
-V , Source-to-Drain Voltage (V)
T = 175°C
J
1
10
100
1000
1 10 100
OPERATION IN THIS ARE A LIMITE D
BY R
DS(on)
10ms
A
-I , Drain C urrent (A)
-V , Drain-to-Source Voltage (V)
DS
D
10µs
100µs
1ms
T = 25°C
T = 175°C
Single Pulse
C
J
0
200
400
600
800
1000
1200
1 10 100
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
is s
C
oss
C
rss