Datasheet
IRF9953
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.82 1.2 V T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 27 54 ns T
J
= 25°C, I
F
= -1.25A
Q
rr
Reverse RecoveryCharge ––– 31 62 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 16
1.3
A
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -1.3A, di/dt ≤ -92A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Starting T
J
= 25°C, L = 67mH
R
G
= 25Ω, I
AS
= -1.3A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.165 0.250 V
GS
= 10V, I
D
= -1.0A
––– 0.290 0.400 V
GS
= 4.5V, I
D
= -0.50A
V
GS(th)
Gate Threshold Voltage -1.0 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance ––– -2.4 ––– S V
DS
= -15V, I
D
= -2.3A
––– ––– -2.0 V
DS
= 24V, V
GS
= 0V
––– ––– -25 V
DS
= 24V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= 20V
Q
g
Total Gate Charge ––– 6.1 12 I
D
= -2.3A
Q
gs
Gate-to-Source Charge ––– 1.7 3.4 nC V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.1 2.2 V
GS
= -10V, See Fig. 10
t
d(on)
Turn-On Delay Time ––– 9.7 19 V
DD
= -10V
t
r
Rise Time ––– 14 28 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time ––– 20 40 R
G
= 6.0Ω
t
f
Fall Time ––– 6.9 14 R
D
= 10Ω
C
iss
Input Capacitance ––– 190 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 120 ––– pF V
DS
= -15V
C
rss
Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
S
D
G