Datasheet
IRF9530N
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.6 V T
J
= 25°C, I
S
= -8.4A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 130 190 ns T
J
= 25°C, I
F
= -8.4A
Q
rr
Reverse RecoveryCharge ––– 650 970 nC di/dt = -100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -100 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω V
GS
= -10V, I
D
= -8.4A
V
GS(th)
Gate Threshold Voltage -2.0 ––– -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 3.2 ––– ––– S V
DS
= -50V, I
D
= -8.4A
––– ––– -25
µA
V
DS
= -100V, V
GS
= 0V
––– ––– -250 V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 58 I
D
= -8.4A
Q
gs
Gate-to-Source Charge ––– ––– 8.3 nC V
DS
= -80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 32 V
GS
= -10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 15 ––– V
DD
= -50V
t
r
Rise Time ––– 58 ––– I
D
= -8.4A
t
d(off)
Turn-Off Delay Time ––– 45 ––– R
G
= 9.1Ω
t
f
Fall Time ––– 46 ––– R
D
= 6.2Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 760 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 260 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ -8.4A, di/dt ≤ -490A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
Starting T
J
= 25°C, L = 7.0mH
R
G
= 25Ω, I
AS
= -8.4A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
-14
-56
A
S
D
G
S
D
G