Datasheet

IRF9335PbF
2 www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Starting T
J
= 25°C, L = 10.6mH, R
G
= 50Ω, I
AS
= -4.3A.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
 When mounted on 1 inch square copper board.
 R
θ
is measured at T
J
of approximately 90°C.
 For DESIGN AID ONLY, not subject to production testing.
G
D
S
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C
R
DS(on)
––– 48 59
––– 83 110
V
GS(th)
Gate Threshold Voltage -1.3 -1.8 -2.4 V
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.1 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– -1.0
––– ––– -150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
gfs Forward Transconductance 5.4 ––– ––– S
Q
g
Total Gate Charge ––– 4.7 ––– nC
V
DS
= -15V,V
GS
= -4.5V,I
D
= - 4.3A
Q
g
Total Gate Charge ––– 9.1 14
Q
gs
Gate-to-Source Charge ––– 1.3 –––
Q
gd
Gate-to-Drain Charge ––– 2.6 –––
R
G
Gate Resistance ––– 10 ––– Ω
t
d(on)
Turn-On Delay Time ––– 9.7 –––
t
r
Rise Time ––– 19 –––
t
d(off)
Turn-Off Delay Time ––– 16 –––
t
f
Fall Time ––– 15 –––
C
iss
Input Capacitance ––– 386 –––
C
oss
Output Capacitance ––– 94 –––
C
rss
Reverse Transfer Capacitance ––– 66 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 7.4 11 nC
Thermal Resistance
Parameter Units
R
θJL
Junction-to-Drain Lead
R
θJA
Junction-to-Ambient
Typ.
–––
–––
°C/W
Max.
20
50
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
-2.5
-43
nA
nC
ns
pF
–––
Typ.
–––
R
G
= 6.8
Ω
V
DS
= -10V, I
D
= -4.3A
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
DD
= -15V, V
GS
= -4.5V
I
D
= -1.0A
V
DS
= -15V
V
GS
= -20V
V
GS
= 20V
V
GS
= -10V
m
Ω
µA
T
J
= 25°C, I
F
= -2.5A, V
DD
= -24V
di/dt = 100/µs
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
I
D
= -4.3A
V
DS
= -24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.4A
V
GS
= -4.5V, I
D
= -4.3A
V
DS
= V
GS
, I
D
= -10µA
Conditions
See Figs. 19a & 19b
Max.
98
-4.3
ƒ = 1.0KHz
V
GS
= 0V
V
DS
= -25V