Datasheet

IRF8734PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C
R
DS(on)
––– 2.9 3.5
––– 4.2 5.1
V
GS(th)
Gate Threshold Voltage 1.35 1.80 2.35 V
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.5 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 85 ––– ––– S
Q
g
Total Gate Charge ––– 20 30
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 5.2 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.3 –––
Q
gd
Gate-to-Drain Charge ––– 6.9 –––
Q
godr
Gate Charge Overdrive ––– 5.4 ––– See Figs. 16a &16b
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 9.2 –––
Q
oss
Output Charge ––– 15 ––– nC
R
G
Gate Resistance ––– 1.7 3.1 Ω
t
d(on)
Turn-On Delay Time ––– 13 –––
t
r
Rise Time ––– 16 –––
t
d(off)
Turn-Off Delay Time ––– 15 –––
t
f
Fall Time ––– 8.0 –––
C
iss
Input Capacitance ––– 3175 –––
C
oss
Output Capacitance ––– 627 –––
C
rss
Reverse Transfer Capacitance ––– 241 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 25 38 nC
Conditions
See Figs. 15a &15b
Max.
216
17
ƒ = 1.0MHz
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 21A
V
DS
= V
GS
, I
D
= 50µA
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
mΩ
µA
T
J
= 25°C, I
F
= 17A, V
DD
= 15V
di/dt = 345A/µs
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
I
D
= 17A
V
GS
= 0V
V
DS
= 15V
V
GS
= 4.5V, I
D
= 17A
V
GS
= 4.5V
R
G
= 1.8
Ω
V
DS
= 15V, I
D
= 17A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
DD
= 15V, V
GS
= 4.5V
I
D
= 17A
ns
pF
–––
Typ.
–––
Static Drain-to-Source On-Resistance
A
––– –––
––– –––
3.1
168
nA
nC