Datasheet
IRF8721PbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
R
DS
(
on
)
Static Drain-to-Source On-Resistance ––– 6.9 8.5 mΩ
––– 10.6 12.5
V
GS
(
th
)
Gate Threshold Voltage 1.35 ––– 2.35 V
ΔV
GS
(
th
)
Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 27 ––– ––– S
Q
g
Total Gate Charge ––– 8.3 12
Q
g
s1
Pre-Vth Gate-to-Source Charge ––– 2.0 –––
Q
g
s2
Post-Vth Gate-to-Source Charge ––– 1.0 ––– nC
Q
g
d
Gate-to-Drain Charge ––– 3.2 –––
Q
g
odr
Gate Charge Overdrive ––– 2.0 ––– See Fig. 16a and 16b
Q
sw
Switch Charge (Q
g
s2
+ Q
g
d
) ––– 4.2 –––
Q
oss
Output Charge ––– 5.0 ––– nC
R
G
Gate Resistance ––– 1.8
3.0
Ω
t
d
(
on
)
Turn-On Delay Time ––– 8.2 –––
t
r
Rise Time ––– 11 –––
t
d
(
off
)
Turn-Off Delay Time ––– 8.1 ––– ns
t
f
Fall Time ––– 7.0 –––
C
iss
Input Capacitance ––– 1040 –––
C
oss
Output Capacitance ––– 229 ––– pF
C
rss
Reverse Transfer Capacitance ––– 114 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 3.1
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 112
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 15 23 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Conditions
See Fig. 15a
Max.
68
11
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 14A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 11A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
T
J
= 25°C, I
F
= 11A, V
DD
= 15V
di/dt = 300A/μs
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 11A
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 25μA
R
G
= 1.8Ω
V
DS
= 15V, I
D
= 11A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
–––
I
D
= 11A
V
GS
= 0V
V
DS
= 15V