Datasheet

IRF820A
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 1.4 ––– ––– S V
DS
= 50V, I
D
= 1.5A
Q
g
Total Gate Charge ––– ––– 17 I
D
= 2.5A
Q
gs
Gate-to-Source Charge ––– ––– 4.3 nC V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 8.5 V
GS
= 10V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 8.1 ––– V
DD
= 250V
t
r
Rise Time ––– 12 ––– I
D
= 2.5A
t
d(off)
Turn-Off Delay Time ––– 16 ––– R
G
= 21Ω
t
f
Fall Time ––– 13 ––– R
D
= 97Ω,See Fig. 10 
C
iss
Input Capacitance ––– 340 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 53 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 2.7 ––– pF ƒ = 1.0MHz, See Fig. 5
C
oss
Output Capacitance ––– 490 ––– V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
C
oss
Output Capacitance ––– 15 ––– V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
C
oss
eff. Effective Output Capacitance ––– 28 ––– V
GS
= 0V, V
DS
= 0V to 400V 
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 140 mJ
I
AR
Avalanche Current ––– 2.5 A
E
AR
Repetitive Avalanche Energy ––– 5.0 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) 
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.6 V T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 330 500 ns T
J
= 25°C, I
F
= 2.5A
Q
rr
Reverse RecoveryCharge ––– 760 1140 nC di/dt = 100A/µs 
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
2.5
10
A
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 2.5
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 500 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 3.0 Ω V
GS
= 10V, I
D
= 1.5A 
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.5 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 25
µA
V
DS
= 500V, V
GS
= 0V
––– ––– 250 V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 30V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current