Datasheet

IRF7907PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage Q1&Q2 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient Q1 ––– 0.024 ––– V/°C
Q2 ––– 0.024 –––
Q1 ––– 13.7 16.4
R
DS
(
on
)
Static Drain-to-Source On-Resistance ––– 17.1 20.5 mΩ
Q2 ––– 9.8 11.8
––– 11.5 13.7
V
GS
(
th
)
Gate Threshold Voltage Q1&Q2 1.35 1.8 2.35 V
∆V
GS
(
th
)
/∆T
J
Gate Threshold Voltage Coefficient Q1 ––– -4.6 ––– mV/°C
Q2 ––– -4.9 –––
I
DSS
Drain-to-Source Leakage Current Q1&Q2 ––– ––– 1.0 µA
Q1&Q2 ––– ––– 150
I
GSS
Gate-to-Source Forward Leakage Q1&Q2 ––– ––– 100 nA
Gate-to-Source Reverse Leakage Q1&Q2 ––– ––– -100
gfs Forward Transconductance Q1 19 ––– ––– S
Q2 24 ––– –––
Q
g
Total Gate Charge Q1 ––– 6.7 10
Q2 ––– 14 21
Q
g
s1
Pre-Vth Gate-to-Source Charge Q1 ––– 1.3 ––– Q1
Q2 ––– 3.0 ––– V
DS
= 15V
Q
g
s2
Post-Vth Gate-to-Source Charge Q1 ––– 0.7 ––– nC V
GS
= 4.5V, I
D
= 7.0A
Q2 ––– 1.3 –––
Q
g
d
Gate-to-Drain Charge Q1 ––– 2.5 ––– Q2
Q2 ––– 4.9 ––– V
DS
= 15V
Q
g
odr
Gate Charge Overdrive Q1 ––– 2.2 ––– V
GS
= 4.5V, I
D
= 8.8A
Q2 ––– 4.8 –––
Q
sw
Switch Charge (Q
g
s2
+ Q
g
d
) Q1 ––– 3.2 –––
Q2 ––– 6.2 –––
Q
oss
Output Charge Q1 ––– 4.5 ––– nC
Q2 ––– 9.0 –––
R
G
Gate Resistance
Q1 –––
2.6
4.7
Ω
Q2 ––– 3.0 5.0
t
d
(
on
)
Turn-On Delay Time Q1 ––– 6.0 –––
Q2 ––– 8.0 –––
t
r
Rise Time Q1 ––– 9.3 ––– I
D
= 7.0A
Q2 ––– 14 ––– ns
t
d
(
off
)
Turn-Off Delay Time Q1 ––– 8.0 –––
Q2 ––– 13 –––
t
f
Fall Time Q1 ––– 3.4 ––– I
D
= 8.8A
Q2 ––– 5.3 –––
C
iss
Input Capacitance Q1 ––– 850 –––
Q2 ––– 1790 –––
C
oss
Output Capacitance Q1 ––– 190 ––– pF
Q2 ––– 390 –––
C
rss
Reverse Transfer Capacitance Q1 ––– 88 –––
Q2 ––– 190 –––
Avalanche Characteristics
Parameter Q1 Max. Q2 Max. Units
E
AS
Single Pulse Avalanche Energy
10 15 mJ
I
AR
Avalanche Current
7.0 8.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current Q1 ––– ––– 2.8 A
(Body Diode) Q2 ––– ––– 2.8
I
SM
Pulsed Source Current Q1 ––– ––– 76 A
(Body Diode)
Q2 ––– ––– 85
V
SD
Diode Forward Voltage Q1 ––– ––– 1.0 V
Q2 ––– ––– 1.0
t
r
r
Reverse Recovery Time Q1 ––– 12 18 ns
Q2 ––– 16 24
Q
rr
Reverse Recovery Charge Q1 ––– 4.1 6.1 nC
Q2 ––– 5.9 8.9
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.1A
MOSFET symbol
Q2: V
DS
= V
GS
, I
D
= 50µA
V
DS
= 16V, V
GS
= 0V
Q1
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
Conditions
Q2
Q1 T
J
= 25°C, I
F
= 7.0A,
V
DD
= 15V, di/dt = 100A/µs
T
J
= 25°C, I
S
= 7.3A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
Q2 T
J
= 25°C, I
F
= 8.8A,
V
DD
= 15V, di/dt = 100A/µs
V
DD
= 15V, V
GS
= 4.5V
–––
V
DS
= 15V
Clamped Inductive Load
V
GS
= 0V
ƒ = 1.0MHz
Typ.
–––
V
GS
= 4.5V, I
D
= 7.3A
V
GS
= 4.5V, I
D
= 8.8A
V
DS
= 15V, I
D
= 8.8A
V
DD
= 15V, V
GS
= 4.5V
V
GS
= 10V, I
D
= 11A
Q1: V
DS
= V
GS
, I
D
= 25µA
V
DS
= 15V, I
D
= 7.0A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C