Datasheet

IRF7862PbF
2 www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.0 3.3
––– 3.7 4.5
V
GS(th)
Gate Threshold Voltage 1.35 ––– 2.35 V
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 87 ––– ––– S
Q
g
Total Gate Charge ––– 30 45
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 7.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.1 –––
Q
gd
Gate-to-Drain Charge ––– 9.8 –––
Q
godr
Gate Charge Overdrive ––– 9.6 ––– See Figs. 15 & 16
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
–––12.9–––
Q
oss
Output Charge ––– 18 ––– nC
R
g
Gate Resistance ––– 1.0 1.6 Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time –––19–––
t
d(off)
Turn-Off Delay Time ––– 18 –––
t
f
Fall Time –––11–––
C
iss
Input Capacitance ––– 4090 –––
C
oss
Output Capacitance ––– 810 –––
C
rss
Reverse Transfer Capacitance ––– 390 –––
Avalanche Characteristics
Parameter Units
E
AS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
I
AR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(
Bod
y
Diode
)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 17 26 ns
Q
rr
Reverse Recovery Charge ––– 33 50 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
m
Ω
µA
ns
pF
nC
nA
A
–––
–––
–––
–––
3.1
170
Conditions
See Fig. 18
Max.
350
16
ƒ = 1.0MHz
MOSFET symbol
–––
V
DS
= 15V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
T
J
= 25°C, I
F
= 16A, V
DD
= 15V
di/dt = 430A/
µ
s
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 16A
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 100µA
R
G
= 1.8
Ω
V
DS
= 15V, I
D
= 16A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
I
D
= 16A
V
GS
= 0V