Datasheet

IRF7820PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V

V
DSS
/

T
J
Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 62.5 78
m

V
GS (t h)
Gate Threshold Voltage 3.0 4.0 5.0 V

V
GS(th)
Gate Threshold Voltage Coefficient ––– -12 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GS S
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 5.0 ––– ––– S
Q
g
Total Gate Charge ––– 29 44
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.5 –––
Q
gs
Gate-to-Source Charge ––– 10.1 –––
Q
gd
Gate-to-Drain Charge ––– 8.7 ––– See Figs. 6, 16a & 16b
Q
godr
Gate Charge Overdrive ––– 10.2 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 10.2 –––
Q
oss
Output Charge ––– 30 ––– nC
R
G
Gate Resistance ––– 0.73 –––

t
d(on)
Turn-On Delay Time ––– 7.1 –––
t
r
Rise Time ––– 3.2 –––
t
d(off)
Turn-Off Delay Time ––– 14 –––
t
f
Fall Time ––– 12 –––
C
iss
Input Capacitance ––– 1750 –––
C
oss
Output Capacitance ––– 90 –––
C
rs s
Reverse Transfer Capacitance ––– 25 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 33 50 ns
Q
rr
Reverse Recovery Charge ––– 213 320 nC
I
D
= 2.2A
V
GS
= 0V
V
DS
= 100VpF
Typ.
–––
R
G
= 1.8

nC
ns
–––
V
DS
= 200V, V
GS
= 0V, T
J
= 125°C
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 200V, V
GS
= 0V
V
GS
= 10V
V
DS
= 100V
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 2.2A
T
J
= 25°C, I
F
= 2.2A, V
DD
= 100V
di/dt = 500A/μs
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 20V, V
GS
= 0V
V
DD
= 200V, V
GS
= 10V
I
D
= 2.2A
Conditions
See Figs. 15a & 15b
Max.
606
2.8
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.2A
μA
nA
A
1.5––– –––
––– ––– 29