Datasheet

IRF7815PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 150 ––– ––– V
∆ΒV
DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 34 43
m
Ω
V
GS(th)
Gate Threshold Voltage 3.0 4.0 5.0 V
∆
V
GS(th)
Gate Threshold Voltage Coefficient ––– -12.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 8.2 ––– ––– S
Q
g
Total Gate Charge ––– 25 38
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 6.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.3 –––
Q
gs
Gate-to-Source Charge ––– 7.8 –––
Q
gd
Gate-to-Drain Charge ––– 7.4 ––– See Figs. 6, 16a & 16b
Q
godr
Gate Charge Overdrive ––– 9.8 –––
Q
sw
Switch Char
g
e (Q
gs2
+ Q
gd
)
––– 8..7 –––
Q
oss
Output Charge ––– 10 ––– nC
R
G
Gate Resistance ––– 1.02 –––
Ω
t
d(on)
Turn-On Delay Time ––– 8.4 –––
t
r
Rise Time ––– 3.2 –––
t
d(off)
Turn-Off Delay Time ––– 14 –––
t
f
Fall Time ––– 8.3 –––
C
iss
Input Capacitance ––– 1647 –––
C
oss
Output Capacitance ––– 129 –––
C
rss
Reverse Transfer Capacitance ––– 30 –––
Avalanche Characteristics
Parameter Units
E
AS
Si
n
gl
e
P
u
l
se
A
va
l
anc
h
e
E
ner
gy
mJ
I
AR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 41 62 ns
Q
rr
Reverse Recovery Charge ––– 213 320 nC
I
D
= 3.1A
V
GS
= 0V
V
DS
= 75V
pF
Typ.
–––
R
G
= 1.8
Ω
–––
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 150V, V
GS
= 0V
V
GS
= 10V
V
DS
= 75V
V
GS
= 20V
V
GS
= -20V
V
DS
= 50V, I
D
= 3.1A
T
J
= 25°C, I
F
= 3.1A, V
DD
= 75V
di/dt = 300A/µs
T
J
= 25°C, I
S
= 3.1A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 75V, V
GS
= 10V
I
D
= 3.1A
Conditions
See Figs. 15a & 15b
Max.
529
3.1
ƒ = 1.0MHz
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.1A
µA
nA
nC
ns
A
2.3––– –––
––– ––– 41