Datasheet

IRF7493PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 80 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.074 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 11.5 15
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs Forward Transconductance 13 ––– ––– S
Q
g
Total Gate Charge ––– 35 53
Q
gs
Gate-to-Source Charge ––– 5.7 –––
Q
gd
Gate-to-Drain Charge ––– 12 –––
t
d(on)
Turn-On Delay Time ––– 8.3 –––
t
r
Rise Time ––– 7.5 –––
t
d(off)
Turn-Off Delay Time ––– 30 ––– ns
t
f
Fall Time –––12–––
C
iss
Input Capacitance ––– 1510 –––
C
oss
Output Capacitance ––– 320 ––– pF
C
rss
Reverse Transfer Capacitance ––– 130 –––
C
oss
Output Capacitance ––– 1130 –––
C
oss
Output Capacitance ––– 210 –––
C
rss
eff.
Effective Output Capacitance ––– 320 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 9.3
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 74
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 37 56 ns
Q
rr
Reverse Recovery Charge ––– 52 78 nC
R
G
= 6.2Ω
Conditions
V
GS
= 10V
Max.
180
5.6
V
GS
= 0V, V
DS
= 0V to 64V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.6A
T
J
= 25°C, I
F
= 5.6A, V
DD
= 15V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 5.6A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Typ.
–––
–––
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 64V, ƒ = 1.0MHz
V
DD
= 40V,
I
D
= 5.6A
MOSFET symbol
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
ƒ = 1.0MHz
V
DS
= 15V, I
D
= 5.6A
V
DS
= 40V
V
GS
= 20V
V
GS
= -20V
I
D
= 5.6A