Datasheet

IRF7416
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– -1.0 V T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 56 85 ns T
J
= 25°C, I
F
= -5.6A
Q
rr
Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs 
Source-Drain Ratings and Characteristics
A
––– ––– -45
––– ––– -3.1
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -30 ––– ––– V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, I
D
= -1mA
––– ––– 0.020 V
GS
= -10V, I
D
= -5.6A 
––– ––– 0.035 V
GS
= -4.5V, I
D
= -2.8A 
V
GS(th)
Gate Threshold Voltage -1.0 ––– ––– V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 5.6 ––– ––– S V
DS
= -10V, I
D
= -2.8A
––– ––– -1.0 V
DS
= -24V, V
GS
= 0V
––– ––– -25 V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 61 92 I
D
= -5.6A
Q
gs
Gate-to-Source Charge ––– 8.0 12 nC V
DS
= -24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 22 32 V
GS
= -10V, See Fig. 6 and 9 
t
d(on)
Turn-On Delay Time ––– 18 ––– V
DD
= -15V
t
r
Rise Time ––– 49 ––– I
D
= -5.6A
t
d(off)
Turn-Off Delay Time ––– 59 ––– R
G
= 6.2Ω
t
f
Fall Time ––– 60 ––– R
D
= 2.7Ω, See Fig. 10 
C
iss
Input Capacitance ––– 1700 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 890 ––– pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance ––– 410 ––– ƒ = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 I
SD
≤ -5.6A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
 Starting T
J
= 25°C, L = 25mH
R
G
= 25Ω, I
AS
= -5.6A. (See Figure 12)
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 Surface mounted on FR-4 board, t ≤ 10sec.