Datasheet
IRF7403
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.022 V
GS
= 10V, I
D
= 4.0A
––– ––– 0.035 V
GS
= 4.5V, I
D
= 3.4A
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 8.4 ––– ––– S V
DS
= 15V, I
D
= 4.0A
––– ––– 1.0 V
DS
= 24V, V
GS
= 0V
––– ––– 25 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 57 I
D
= 4.0A
Q
gs
Gate-to-Source Charge ––– ––– 6.8 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 18 V
GS
= 10V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time ––– 10 ––– V
DD
= 15V
t
r
Rise Time ––– 37 ––– I
D
= 4.0A
t
d(off)
Turn-Off Delay Time ––– 42 ––– R
G
= 6.0Ω
t
f
Fall Time ––– 40 ––– R
D
= 3.7Ω, See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance ––– 1200 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 450 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.0 V T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 52 78 ns T
J
= 25°C, I
F
= 4.0A
Q
rr
Reverse RecoveryCharge ––– 93 140 nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 4.0A, di/dt ≤ 180A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
––– ––– 34
––– ––– 3.1
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance ––– 4.0 –––
L
D
Internal Drain Inductance ––– 2.5 –––
nH
ns
nA
µA
ΩR
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.