Datasheet

IRF7351PbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V
∆ΒV
DSS
/
∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.068 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 13.7 17.8
mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -8.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 18 ––– ––– S
Q
g
Total Gate Charge ––– 24 36
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 3.8 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC
Q
gd
Gate-to-Drain Charge ––– 7.2 –––
Q
godr
Gate Charge Overdrive ––– 11.8 ––– See Fig. 17
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 8.4 –––
Q
oss
Output Charge ––– 7.5 ––– nC
t
d(on)
Turn-On Delay Time ––– 5.1 –––
t
r
Rise Time ––– 5.9 ––– ns
t
d(off)
Turn-Off Delay Time ––– 17 –––
t
f
Fall Time ––– 6.7 –––
C
iss
Input Capacitance ––– 1330 –––
C
oss
Output Capacitance ––– 190 ––– pF
C
rss
Reverse Transfer Capacitance ––– 92 –––
Avalanche Characteristics
Parameter Units
E
AS
Si
ng
l
e
P
u
l
se
A
va
l
anc
h
e
E
nergy
mJ
I
AR
A
va
l
anc
h
e
C
urrent
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 1.8
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 64
(Bod
y
Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 61 92 nC
–––
I
D
= 6.4A
V
GS
= 0V
V
DS
= 30V
V
GS
= 10V
Typ.
–––
V
DS
= V
GS
, I
D
= 50µA
R
G
= 1.8Ω
V
DS
= 25V, I
D
= 6.4A
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
T
J
= 25°C, I
F
= 6.4A, V
DD
= 30V
di/dt = 300A/µs
T
J
= 25°C, I
S
= 6.4A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 30V, V
GS
= 10V
I
D
= 6.4A
V
DS
= 30V
V
GS
= 20V
V
GS
= -20V
V
DS
= 60V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 8.0A
Conditions
Max.
325
6.4
ƒ = 1.0MHz