Datasheet
IRF7341PbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.059 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.043 0.050 V
GS
= 10V, I
D
= 4.7A
––– 0.056 0.065 V
GS
= 4.5V, I
D
= 3.8A
V
GS(th)
Gate Threshold Voltage 1.0 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 7.9 ––– ––– S V
DS
= 10V, I
D
= 4.5A
––– ––– 2.0 V
DS
= 55V, V
GS
= 0V
––– ––– 25 V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage ––– ––– -100 V
GS
= -20V
Gate-to-Source Reverse Leakage ––– ––– 100 V
GS
= 20V
Q
g
Total Gate Charge ––– 24 36 I
D
= 4.5A
Q
gs
Gate-to-Source Charge ––– 2.3 3.4 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 7.0 10 V
GS
= 10V, See Fig. 10
t
d(on)
Turn-On Delay Time ––– 8.3 12 V
DD
= 28V
t
r
Rise Time ––– 3.2 4.8 I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 32 48 R
G
= 6.0Ω
t
f
Fall Time ––– 13 20 R
D
= 16Ω,
C
iss
Input Capacitance ––– 740 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 190 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 71 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.2 V T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 60 90 ns T
J
= 25°C, I
F
= 2.0A
Q
rr
Reverse RecoveryCharge ––– 120 170 nC di/dt = -100A/µs
Source-Drain Ratings and Characteristics
38
2.0
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 4.7A, di/dt ≤ 220A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Starting T
J
= 25°C, L = 6.5mH
R
G
= 25Ω, I
AS
= 4.7A. (See Figure 8)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
S
D
G