Datasheet

IRF7311
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
R
DS
(on) , Drain-to-Source On Resistance (Ω)
R
DS
(on) , Drain-to-Source On Resistance (Ω)
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
1.8A
3.3A
4.1A
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
6.0A
0.01
0.02
0.03
0.04
0.05
02468
A
GS
V , Gate-to-Source Volta
g
e
(
V
)
I = 6.6A
D
0.020
0.024
0.028
0.032
0 102030
A
I , Drain Current
(
A
)
D
V = 4.5V
GS
V = 2.7V
GS