Datasheet
IRF7311
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.72 1.0 V T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 52 77 ns T
J
= 25°C, I
F
= 1.7A
Q
rr
Reverse RecoveryCharge ––– 58 86 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– 26
2.5
A
S
D
G
Surface mounted on 1 in square Cu board
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 4.1A, di/dt ≤ 92A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Notes:
Starting T
J
= 25°C, L = 12mH
R
G
= 25Ω, I
AS
= 4.1A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.023 0.029 V
GS
= 4.5V, I
D
= 6.0A
––– 0.030 0.046 V
GS
= 2.7V, I
D
= 5.2A
V
GS(th)
Gate Threshold Voltage 0.7 ––– ––– V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance ––– 20 ––– S V
DS
= 10V, I
D
= 6.0A
––– ––– 1.0 V
DS
= 16V, V
GS
= 0V
––– ––– 5.0 V
DS
= 16V, V
GS
= 0V, T
J
= 55°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -12V
Q
g
Total Gate Charge ––– 18 27 I
D
= 6.0A
Q
gs
Gate-to-Source Charge ––– 2.2 3.3 nC V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 6.2 9.3 V
GS
= 4.5V, See Fig. 10
t
d(on)
Turn-On Delay Time ––– 8.1 12 V
DD
= 10V
t
r
Rise Time ––– 17 25 I
D
= 1.0A
t
d(off)
Turn-Off Delay Time ––– 38 57 R
G
= 6.0Ω
t
f
Fall Time ––– 31 47 R
D
= 10Ω
C
iss
Input Capacitance ––– 900 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 430 ––– pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
µA
Ω
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns