Datasheet

152
IRF7309
P-Channel
Fig 14. Typical Transfer Characteristics
Fig 15. Normalized On-Resistance
Vs. Temperature
Fig 16. Typical Capacitance Vs. Drain-to-
Source Voltage
Fig 17. Typical Gate Charge Vs. Gate-to-
Source Voltage
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
A
D
S
-V , Drain-to-Source Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
1
10
100
4 5 6 7 8 9 10
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -15V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
A
V = -10V
GS
I = -3.0A
D
0
4
8
12
16
20
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
A
-V , Gate-to-Source Voltage (V)
GS
I = -3.0A
V = -24V
DS
D
FOR TEST CIRCUIT
SEE FIGURE 22