Datasheet

150
IRF7309
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs. Drain-to-
Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
N-Channel
0
200
400
600
800
1000
1 10 100
C, Capacitance (pF)
D
S
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
I = 2.4A
V = 24V
D
DS
FOR TEST CIRCUIT
SEE FIGURE 11
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
S
D
SD
A
0.1
1
10
100
0.1 1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
100µs
1ms
10ms
100ms
A
A
J