Datasheet

148
IRF7309
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
N-Channel
I
D
= 2.6A, V
DS
= 16V, V
GS
= 4.5V
P-Channel
I
D
= -2.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 2.6A, R
G
= 6.0Ω,
R
D
= 3.8Ω
P-Channel
V
DD
= -10V, I
D
= -2.2A, R
G
= 6.0Ω,
R
D
= 4.5Ω
N-Channel
V
GS
= 0V, V
DS
= 15V, ƒ = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -15V, ƒ = 1.0MHz
N-Ch
P-Ch
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
= 2.6A, di/dt = 100A/µs
P-Channel
T
J
= 25°C, I
F
= -2.2A, di/dt = 100A/µs
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
Parameter Min. Typ. Max. Units Conditions
N-Ch 30 — — V
GS
= 0V, I
D
= 250µA
P-Ch -30 — — V
GS
= 0V, I
D
= -250µA
N-Ch — 0.032 — Reference to 25°C, I
D
= 1mA
P-Ch — -0.037 — Reference to 25°C, I
D
= -1mA
— — 0.050 V
GS
= 10V, I
D
= 2.4A
— — 0.080 V
GS
= 4.5V, I
D
= 2.0A
— — 0.10 V
GS
= -10V, I
D
= -1.8A
— — 0.16 V
GS
= -4.5V, I
D
= -1.5A
N-Ch 1.0 — — V
DS
= V
GS
, I
D
= 250µA
P-Ch -1.0 — — V
DS
= V
GS
, I
D
= -250µA
N-Ch 5.2 — — V
DS
= 15V, I
D
= 2.4A
P-Ch 2.5 — — V
DS
= -24V, I
D
= -1.8A
N-Ch — — 1.0 V
DS
= 24V, V
GS
= 0V
P-Ch — — -1.0 V
DS
= -24V, V
GS
= 0V
N-Ch — — 25 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
P-Ch — — -25 V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage N-P –– — ±100 V
GS
= ± 20V
N-Ch — — 25
P-Ch — — 25
N-Ch — — 2.9
P-Ch — — 2.9
N-Ch — — 7.9
P-Ch — — 9.0
N-Ch — 6.8 —
P-Ch — 11 —
N-Ch — 21 —
P-Ch — 17 —
N-Ch — 22 —
P-Ch — 25 —
N-Ch — 7.7 —
P-Ch — 18 —
L
D
Internal Drain Inductace N-P — 4.0 — Between lead tip
L
S
Internal Source Inductance N-P — 6.0 — and center of die contact
N-Ch — 520 —
P-Ch — 440 —
N-Ch — 180 —
P-Ch — 200 —
N-Ch — 72 —
P-Ch — 93 —
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 1.8
P-Ch — — -1.8
N-Ch — — 16
P-Ch — — -12
N-Ch — — 1.0 T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
P-Ch — — -1.0 T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
N-Ch — 47 71
P-Ch — 53 80
N-Ch — 56 84
P-Ch — 66 99
t
on
Forward Turn-On Time N-P
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 )
N-Channel I
SD
≤ 2.4A, di/dt ≤ 73A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
P-Channel I
SD
≤ -1.8A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.