Datasheet

IRF7307
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
20µs PULSE WIDTH
T = 25 °C
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
J
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
1.5V
20µs PULSE WIDTH
T = 150°C
J
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 1 5V
20µs PULSE W IDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-S ource On Res istanc e
DS(on)
(Normalized)
A
V = 4.5 V
GS
I = 4 .3A
D
0
300
600
900
1200
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V , f = 1MH z
C = C + C , C SHO RTE D
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds g d
C
iss
C
oss
C
rss
0
2
4
6
8
10
0 5 10 15 20 25
Q , Total G ate C harge (nC )
G
V , G ate-to-Source Voltage (V)
GS
A
I = 2.6A
V = 16 V
D
DS
FOR TEST CIRCUIT
SE E FIGU RE 11
N-Channel