Datasheet

IRF7307
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 — — V
GS
= 0V, I
D
= 250µA
P-Ch -20 — — V
GS
= 0V, I
D
= -250µA
N-Ch — 0.044 — Reference to 25°C, I
D
= 1mA
P-Ch — -0.012 — Reference to 25°C, I
D
= -1mA
— — 0.050 V
GS
= 4.5V, I
D
= 2.6A 
— — 0.070 V
GS
= 2.7V, I
D
= 2.2A 
— — 0.090 V
GS
= -4.5V, I
D
= -2.2A 
— — 0.140 V
GS
= -2.7V, I
D
= -1.8A 
N-Ch 0.70 — — V
DS
= V
GS
, I
D
= 250µA
P-Ch -0.70 — — V
DS
= V
GS
, I
D
= -250µA
N-Ch 8.30 — — V
DS
= 15V, I
D
= 2.6A 
P-Ch 4.00 — — V
DS
= -15V, I
D
= -2.2A 
N-Ch — — 1.0 V
DS
= 16V, V
GS
= 0V
P-Ch — — -1.0 V
DS
= -16V, V
GS
= 0V,
N-Ch — — 25 V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
P-Ch — — -25 V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage N-P –– — ±100 V
GS
= ± 12V
N-Ch — — 20
P-Ch — — 22
N-Ch — — 2.2
P-Ch — — 3.3
N-Ch — — 8.0
P-Ch — — 9.0
N-Ch — 9.0 —
P-Ch — 8.4 —
N-Ch — 42 —
P-Ch — 26 —
N-Ch — 32 —
P-Ch — 51 —
N-Ch — 51 —
P-Ch — 33 —
L
D
Internal Drain Inductace N-P — 4.0 — Between lead tip
L
S
Internal Source Inductance N-P — 6.0 — and center of die contact
N-Ch — 660 —
P-Ch — 610 —
N-Ch — 280 —
P-Ch — 310 —
N-Ch — 140 —
P-Ch — 170 —
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.5
P-Ch — — -2.5
N-Ch — — 21
P-Ch — — -17
N-Ch — — 1.0 T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V 
P-Ch — — -1.0 T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V 
N-Ch — 29 44
P-Ch — 56 84
N-Ch — 22 33
P-Ch — 71 110
t
on
Forward Turn-On Time N-P
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 23 )
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
Ω
V
S
µA
nC
ns
nH
pF
N-Channel
I
D
= 2.6A, V
DS
= 16V, V
GS
= 4.5V

P-Channel
I
D
= -2.2A, V
DS
= -16V, V
GS
= -4.5V
N-Channel
V
DD
= 10V, I
D
= 2.6A, R
G
= 6.0Ω,
R
D
= 3.8Ω

P-Channel
V
DD
= -10V, I
D
= -2.2A, R
G
= 6.0Ω,
R
D
= 4.5Ω
N-Channel
V
GS
= 0V, V
DS
= 15V, ƒ = 1.0MHz

P-Channel
V
GS
= 0V, V
DS
= -15V, ƒ = 1.0MHz
N-Ch
P-Ch
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode) 
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25°C, I
F
= 2.6A, di/dt = 100A/µs
P-Channel 
T
J
= 25°C, I
F
= -2.2A, di/dt = 100A/µs
Intrinsic turn-on time is neglegible (turn-on is dominated by L
S
+L
D
)
 N-Channel I
SD
≤ 2.6A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
P-Channel I
SD
≤ -2.2A, di/dt ≤ 50A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 150°C
 Surface mounted on FR-4 board, t ≤ 10sec.