Datasheet

IRF7303PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30   V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  0.032  V/°C Reference to 25°C, I
D
= 1mA
  0.050 V
GS
= 10V, I
D
= 2.4A 
  0.080 V
GS
= 4.5V, I
D
= 2.0A 
V
GS(th)
Gate Threshold Voltage 1.0   V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 5.2   S V
DS
= 15V, I
D
= 2.4A
  1.0 V
DS
= 24V, V
GS
= 0V
  25 V
DS
= 24V, V
GS
= 0V, T
J
= 125 °C
Gate-to-Source Forward Leakage   100 V
GS
= 20V
Gate-to-Source Reverse Leakage   -100 V
GS
= - 20V
Q
g
Total Gate Charge   25 I
D
= 2.4A
Q
gs
Gate-to-Source Charge   2.9 nC V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge   7.9 V
GS
= 10V, See Fig. 6 and 12 
t
d(on)
Turn-On Delay Time  6.8  V
DD
= 15V
t
r
Rise Time  21  I
D
= 2.4A
t
d(off)
Turn-Off Delay Time  22  R
G
= 6.0Ω
t
f
Fall Time  7.7  R
D
= 6.2Ω, See Fig. 10 
Between lead tip
and center of die contact
C
iss
Input Capacitance  520  V
GS
= 0V
C
oss
Output Capacitance  180  pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance  72   = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage   1.0 V T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V 
t
rr
Reverse Recovery Time  47 71 ns T
J
= 25°C, I
F
= 2.4A
Q
rr
Reverse RecoveryCharge  56 84 nC di/dt = 100A/µs 
t
on
Forward Turn-On Time
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 I
SD
≤ 2.4A, di/dt ≤ 73A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
  20
  2.5
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance  6.0 
L
D
Internal Drain Inductance  4.0 
nH
ns
nA
µA
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
 Surface mounted on FR-4 board, t ≤ 10sec.