Datasheet

IRF7204PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20   V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  -0.022  V/°C Reference to 25°C, I
D
= -1mA
  0.060 V
GS
= -10V, I
D
= -5.3A 
  0.10 V
GS
= -4.5V, I
D
= -2.0A 
V
GS(th)
Gate Threshold Voltage -1.0  -2.5 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance  7.9  S V
DS
= -15V, I
D
= -5.3A 
  -25 V
DS
= -16V, V
GS
= 0V
  -250 V
DS
= -16V, V
GS
= 0V, T
J
= 125 °C
Gate-to-Source Forward Leakage   -100 V
GS
= -12V
Gate-to-Source Reverse Leakage   100 V
GS
= 12V
Q
g
Total Gate Charge  25  I
D
= -5.3A
Q
gs
Gate-to-Source Charge  5.0  nC V
DS
= -10V
Q
gd
Gate-to-Drain ("Miller") Charge  8.0  V
GS
= -10V 
t
d(on)
Turn-On Delay Time  14 30 V
DD
= -10V
t
r
Rise Time  26 60 I
D
= -1.0A
t
d(off)
Turn-Off Delay Time  100 150 R
G
= 6.0Ω
t
f
Fall Time  68 100 R
D
= 10Ω 
Between lead,6mm(0.25in.)
from package and center
of die contact
C
iss
Input Capacitance  860  V
GS
= 0V
C
oss
Output Capacitance  750  pF V
DS
= -10V
C
rss
Reverse Transfer Capacitance  230   = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)  p-n junction diode.
V
SD
Diode Forward Voltage   -1.2 V T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V 
t
rr
Reverse Recovery Time  85 100 ns T
J
= 25°C, I
F
= -2.4A
Q
rr
Reverse RecoveryCharge  77 120 nC di/dt = 100A/µs 
t
on
Forward Turn-On Time
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
  -15
  -2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance  4.0 
L
D
Internal Drain Inductance  2.5 
nH
ns
nA
µA
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 I
SD
≤ -5.3A, di/dt ≤ 90A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
 Surface mounted on FR-4 board, t ≤ 10sec.
S
D
G
S
D
G