Datasheet

IRF6797MTRPbF
2 www.irf.com
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 10 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.1 1.4
mΩ
––– 1.8 2.4
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -4.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 500 µA
––– ––– 5.0 mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 130 ––– ––– S
Q
g
Total Gate Charge ––– 45 68
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 12 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 6.2 ––– nC
Q
gd
Gate-to-Drain Charge ––– 13 –––
Q
godr
Gate Charge Overdrive ––– 14 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 19.2 –––
Q
oss
Output Charge ––– 38 ––– nC
R
G
Gate Resistance ––– 1.3 2.2 Ω
t
d(on)
Turn-On Delay Time ––– 22 –––
t
r
Rise Time –––32–––ns
t
d(off)
Turn-Off Delay Time ––– 20 –––
t
f
Fall Time ––– 15 –––
C
iss
Input Capacitance ––– 5790 –––
C
oss
Output Capacitance ––– 1790 ––– pF
C
rss
Reverse Transfer Capacitance ––– 720 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 36
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 300
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 0.65 V
t
rr
Reverse Recovery Time ––– 30 45 ns
Q
rr
Reverse Recovery Charge ––– 38 57 nC
di/dt = 200A/µs
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 30A
V
DS
= V
GS
, I
D
= 10mA
V
DS
= V
GS
, I
D
= 150µA
T
J
= 25°C, I
F
= 30A
V
GS
= 4.5V
I
D
= 30A
V
GS
= 0V
V
DS
= 13V
I
D
= 30A
V
DD
= 13V, V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 10mA
V
GS
= 10V, I
D
= 38A
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 13V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
R
G
= 1.8
Ω
V
DS
= 13V, I
D
= 30A
Conditions
See Fig. 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V