Datasheet

IRF6795MTRPbF
2 www.irf.com
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 11 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.4 1.8
mΩ
––– 2.4 3.2
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 500 µA
––– ––– 5.0 mA
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 100 ––– ––– S
Q
g
Total Gate Charge ––– 35 53
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.8 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 4.8 ––– nC
Q
gd
Gate-to-Drain Charge ––– 10 –––
Q
godr
Gate Charge Overdrive ––– 11 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 14.8 –––
Q
oss
Output Charge ––– 27 ––– nC
R
G
Gate Resistance ––– 1.3 2.2 Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time ––– 27 ––– ns
t
d(off)
Turn-Off Delay Time ––– 16 –––
t
f
Fall Time ––– 11 –––
C
iss
Input Capacitance ––– 4280 –––
C
oss
Output Capacitance ––– 1280 ––– pF
C
rss
Reverse Transfer Capacitance ––– 550 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 32
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 250
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 0.75 V
t
rr
Reverse Recovery Time ––– 27 41 ns
Q
rr
Reverse Recovery Charge ––– 34 51 nC
di/dt = 200A/µs
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 25A
V
DS
= V
GS
, I
D
= 10mA
V
DS
= V
GS
, I
D
= 100µA
T
J
= 25°C, I
F
= 25A
V
GS
= 4.5V
I
D
= 25A
V
GS
= 0V
V
DS
= 13V
I
D
= 25A
V
DD
= 13V, V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 32A
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 13V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
R
G
= 1.8
Ω
V
DS
= 13V, I
D
= 25A
Conditions
See Fig. 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V