Datasheet

IRF6725MPbF
2 www.irf.com
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.7 2.2
m
Ω
––– 2.4 3.2
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 150 ––– ––– S
Q
g
Total Gate Charge ––– 36 54
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.8 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.9 ––– nC
Q
gd
Gate-to-Drain Charge ––– 11 –––
Q
godr
Gate Charge Overdrive ––– 12 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 14.9 –––
Q
oss
Output Charge ––– 21 ––– nC
R
G
Gate Resistance ––– 1.3 2.2 Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time ––– 22 ––– ns
t
d(off)
Turn-Off Delay Time ––– 19 –––
t
f
Fall Time ––– 13 –––
C
iss
Input Capacitance ––– 4700 –––
C
oss
Output Capacitance ––– 960 ––– pF
C
rss
Reverse Transfer Capacitance ––– 420 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 130
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 220
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.77 1.0 V
t
rr
Reverse Recovery Time ––– 24 36 ns
Q
rr
Reverse Recovery Charge ––– 39 59 nC
MOSFET symbol
R
G
= 1.8Ω
V
DS
= 15V, I
D
= 22A
Conditions
See Fig. 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 28A
V
GS
= 4.5V, I
D
= 22A
V
DS
= V
GS
, I
D
= 100µA
T
J
= 25°C, I
F
= 22A
V
GS
= 4.5V
I
D
= 22A
V
GS
= 0V
V
DS
= 15V
I
D
= 22A
V
DD
= 15V, V
GS
= 4.5V
di/dt = 260A/µs
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.