Datasheet

IRF6724MPbF
2 www.irf.com
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.90 2.50
m
Ω
––– 2.70 3.50
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -6.1 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 130 ––– ––– S
Q
g
Total Gate Charge ––– 33 54
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.9 ––– nC
Q
gd
Gate-to-Drain Charge ––– 10 –––
Q
godr
Gate Charge Overdrive ––– 11 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 14 –––
Q
oss
Output Charge ––– 20 ––– nC
R
G
Gate Resistance ––– 1.2 2.2 Ω
t
d(on)
Turn-On Delay Time ––– 11 –––
t
r
Rise Time ––– 19 –––
t
d(off)
Turn-Off Delay Time ––– 23 ––– ns
t
f
Fall Time ––– 16 –––
C
iss
Input Capacitance ––– 4404 –––
C
oss
Output Capacitance ––– 885 ––– pF
C
rss
Reverse Transfer Capacitance ––– 424 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 150
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 212
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 34 51 nC
di/dt = 300A/µs
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 21A
V
DS
= V
GS
, I
D
= 100µA
T
J
= 25°C, I
F
=21A
V
GS
= 4.5V
I
D
= 21A
V
GS
= 0V
V
DS
= 15V
I
D
= 21A
V
DD
= 15V, V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 27A
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
R
G
= 1.8Ω
V
DS
= 15V, I
D
=21A
Conditions
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V