Datasheet

IRF6722SPbF
2 www.irf.com
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.7 7.3
mΩ
––– 8.0 10.3
V
GS(th)
Gate Threshold Voltage 1.4 1.9 2.4 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 23 ––– ––– S
Q
g
Total Gate Charge ––– 11 17
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.2 ––– nC
Q
gd
Gate-to-Drain Charge ––– 4.1 –––
Q
godr
Gate Charge Overdrive ––– 3.0 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 5.3 –––
Q
oss
Output Charge ––– 11 ––– nC
R
G
Gate Resistance ––– 1.4 2.5 Ω
t
d(on)
Turn-On Delay Time ––– 7.7 –––
t
r
Rise Time ––– 11 ––– ns
t
d(off)
Turn-Off Delay Time ––– 8.5 –––
t
f
Fall Time ––– 5.7 –––
C
iss
Input Capacitance ––– 1320 –––
C
oss
Output Capacitance ––– 490 ––– pF
C
rss
Reverse Transfer Capacitance ––– 150 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 52
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 110
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.80 1.0 V
t
rr
Reverse Recovery Time ––– 21 32 ns
Q
rr
Reverse Recovery Charge ––– 30 45 nC
di/dt = 500A/µs
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 4.5V, I
D
= 11A
V
DS
= V
GS
, I
D
= 50µA
T
J
= 25°C, I
F
= 11A
V
GS
= 4.5V
I
D
= 11A
V
GS
= 0V
V
DS
= 15V
I
D
= 11A
V
DD
= 15V, V
GS
= 4.5V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
R
G
= 1.8
Ω
V
DS
= 15V, I
D
= 11A
Conditions
See Fig. 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V