Datasheet

IRF6710S2TR/TR1PbF
www.irf.com 5
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
Fig 15. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typ. Forward Transconductance vs. Drain Current
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
10
20
30
40
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250µA
I
D
= 25µA
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
SD
, Reverse Drain Current (A)
V
GS
= 0V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
0.0 0.1 1.0 10.0 100.0
V
DS
, Drain-toSource Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
A
= 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
1.8A
3.8A
BOTTOM
10A
0 20 40 60 80 100 120 140
I
D,
Drain-to-Source Current (A)
0
100
200
300
400
500
600
700
Gfs, Forward Transconductance (S)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
380µs PULSE WIDTH