Datasheet

IRF6710S2TR/TR1PbF
2 www.irf.com
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 25 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 17 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.5 5.9
mΩ
––– 9.0 11.9
V
GS(th)
Gate Threshold Voltage 1.4 1.8 2.4 V
∆
V
GS(th)
/
∆
T
J
Gate Threshold Voltage Coefficient ––– -7.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 21 ––– ––– S
Q
g
Total Gate Charge ––– 8.8 13
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.3 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.3 ––– nC
Q
gd
Gate-to-Drain Charge ––– 3.0 –––
Q
godr
Gate Charge Overdrive ––– 2.2 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 4.3 –––
Q
oss
Output Charge ––– 4.4 ––– nC
R
G
Gate Resistance ––– 0.3 Ω
t
d(on)
Turn-On Delay Time ––– 7.9 –––
t
r
Rise Time ––– 20 –––
t
d(off)
Turn-Off Delay Time ––– 5.2 ––– ns
t
f
Fall Time ––– 6.0 –––
C
iss
Input Capacitance ––– 1190 –––
C
oss
Output Capacitance ––– 320 ––– pF
C
rss
Reverse Transfer Capacitance ––– 150 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 19
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 100
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 8.0 12 nC
MOSFET symbol
R
G
= 6.2
Ω
V
DS
= 15V, I
D
=10A
Conditions
ƒ = 1.0MHz
V
DS
= 10V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 13V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 10A
V
DS
= V
GS
, I
D
= 25µA
T
J
= 25°C, I
F
=10A
V
GS
= 4.5V
I
D
= 10A
V
GS
= 0V
V
DS
= 13V
I
D
= 10A
V
DD
= 13V, V
GS
= 4.5V
di/dt = 200A/µs
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.