Datasheet

IRF6668PbF
2 www.irf.com
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 80 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.097 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 12 15
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 4.0 4.9 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 22 ––– ––– S
Q
g
Total Gate Charge ––– 22 31
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 4.8 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC
Q
gd
Gate-to-Drain Charge ––– 7.8 12
Q
godr
Gate Charge Overdrive ––– 7.8 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 9.4 –––
Q
oss
Output Charge ––– 12 ––– nC
R
G(Internal)
Gate Resistance
–––
1.0 –––
Ω
t
d(on)
Turn-On Delay Time ––– 19 –––
t
r
Rise Time ––– 13 –––
t
d(off)
Turn-Off Delay Time ––– 7.1 ––– ns
t
f
Fall Time ––– 23 –––
C
iss
Input Capacitance ––– 1320 –––
C
oss
Output Capacitance ––– 310 ––– pF
C
rss
Reverse Transfer Capacitance ––– 76 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 81
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 170
(Body Diode)
g
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 34 51 ns
Q
rr
Reverse Recovery Charge ––– 40 60 nC
MOSFET symbol
R
G
= 6.2Ω
V
DS
= 10V, I
D
= 12A
Conditions
See Fig. 16 & 17
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
DD
= 40V, V
GS
= 10V
i
V
DS
= 40V
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 80V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
i
T
J
= 25°C, I
F
= 12A
di/dt = 100A/µs
i
See Fig. 18
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
i
showing the
integral reverse
p-n junction diode.
I
D
= 12A
V
GS
= 0V
V
DS
= 25V
I
D
= 12A
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V