Datasheet

IRF6641TRPbF
2 www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 200 ––– ––– V
∆Β
V
DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.23 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 51 59.9
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 4.0 4.9 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 13 ––– ––– S
Q
g
Total Gate Charge ––– 34 48
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 8.7 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 1.9 ––– nC
Q
gd
Gate-to-Drain Charge ––– 9.5 14
Q
godr
Gate Charge Overdrive ––– 14 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 11 –––
Q
oss
Output Charge ––– 12 ––– nC
R
G
Gate Resistance ––– 1.0 ––– Ω
t
d(on)
Turn-On Delay Time ––– 16 –––
t
r
Rise Time ––– 11 –––
t
d(off)
Turn-Off Delay Time ––– 31 ––– ns
t
f
Fall Time ––– 6.5 –––
C
iss
Input Capacitance ––– 2290 –––
C
oss
Output Capacitance ––– 240 ––– pF
C
rss
Reverse Transfer Capacitance ––– 46 –––
C
oss
Output Capacitance ––– 1780 –––
C
oss
Output Capacitance ––– 100 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 26
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 37
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 85 130 ns
Q
rr
Reverse Recovery Charge ––– 320 480 nC
I
D
= 5.5A
V
DS
= 160V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 10V
V
DS
= 10V, I
D
= 5.5A
V
DS
= 100V
T
J
= 25°C, I
F
= 5.5A, V
DD
= 100V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 5.5A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 200V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.5A
V
DS
= 16V, V
GS
= 0V
V
DD
= 100V, V
GS
= 10V
V
GS
= 0V
ƒ = 1.0MHz
I
D
= 5.5A
MOSFET symbol
R
G
= 6.2
Ω
V
DS
= 25V
Conditions
V
GS
= 0V, V
DS
= 160V, f=1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz