Datasheet

IRF5801PbF
6 www.irf.com
25 50 75 100 125 150
0
5
10
15
20
25
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
I
D
TOP
BOTTOM
0.4A
0.7A
0.9A
Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
t
p
V
(BR)D SS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
012345
I
D
, Drain Current ( A )
0.000
2.000
4.000
6.000
8.000
10.000
12.000
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
VGS = 10V
6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0
V
GS,
Gate -to -Source Voltage (V)
1.500
1.750
2.000
2.250
2.500
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 0.6A