Datasheet

IRF5210PbF
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
 
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) 
 
p-n junction diode.
V
SD
Diode Forward Voltage   -1.6 V T
J
= 25°C, I
S
= -21A, V
GS
= 0V 
t
rr
Reverse Recovery Time  170 260 ns T
J
= 25°C, I
F
= -21A
Q
rr
Reverse RecoveryCharge  1.2 1.8 µC di/dt = -100A/µs 
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage -100   V V
GS
= 0V, I
D
= -250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  -0.11  V/°C Reference to 25°C, I
D
= -1mA
R
DS(on)
Static Drain-to-Source On-Resistance   0.06 Ω V
GS
= -10V, I
D
= -24A 
V
GS(th)
Gate Threshold Voltage -2.0  -4.0 V V
DS
= V
GS
, I
D
= -250µA
g
fs
Forward Transconductance 10   S V
DS
= -50V, I
D
= -21A
  -25
µA
V
DS
= -100V, V
GS
= 0V
  -250 V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100 V
GS
= 20V
Gate-to-Source Reverse Leakage   -100
nA
V
GS
= -20V
Q
g
Total Gate Charge   180 I
D
= -21A
Q
gs
Gate-to-Source Charge   25 nC V
DS
= -80V
Q
gd
Gate-to-Drain ("Miller") Charge   97 V
GS
= -10V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time  17  V
DD
= -50V
t
r
Rise Time  86  I
D
= -21A
t
d(off)
Turn-Off Delay Time  79  R
G
= 2.5Ω
t
f
Fall Time  81  R
D
= 2.4Ω, See Fig. 10 
Between lead,
 
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance  2700  V
GS
= 0V
C
oss
Output Capacitance  790  pF V
DS
= -25V
C
rss
Reverse Transfer Capacitance  450   = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance  
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 I
SD
≤ -21A, di/dt ≤ -480A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
 V
DD
= -25V, starting T
J
= 25°C, L = 3.5mH
R
G
= 25Ω, I
AS
= -21A. (See Figure 12)
 Pulse width ≤ 300µs; duty cycle ≤ 2%.
-40
-140
A
S
D
G
S
D
G