Datasheet

Features
•
Integrated 600V half-bridge gate driver
•
15.6V zener clamp on Vcc
•
True micropower start up
•
Tighter initial deadtime control
•
Low temperature coefficient deadtime
•
Shutdown feature (1/6th Vcc) on C
T
pin
•
Increased undervoltage lockout Hysteresis (1V)
•
Lower power level-shifting circuit
•
Constant LO, HO pulse widths at startup
•
Lower di/dt gate driver for better noise immunity
•
Low side output in phase with RT
•
Internal 50nsec (typ.) bootstrap diode (IR2153D)
•
Excellent latch immunity on all inputs and outputs
•
ESD protection on all leads
•
Also available LEAD-FREE
(NOTE:For new designs, we recommend
IR’s new product IRS2153D)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Product Summary
V
OFFSET
600V max.
Duty Cycle 50%
T
r
/T
p
80/40ns
V
clamp
15.6V
Deadtime (typ.) 1.2 µs
Typical Connections
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(S)
IR2153D
VB
HO
VS
LO
VCC
RT
CT
COM
600V
MAX
Shutdown
IR2153(D)(S) &(PbF)
Description
The IR2153D(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and incor-
porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS
555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature
has been designed into the C
T
pin, so that both gate driver outputs can be disabled using a low voltage control
signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout
threshold on V
CC
has been reached, resulting in a more stable profile of frequency vs time at startup.
Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by
increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing
the latch immunity of the device, and providing comprehensive ESD protection on all pins.
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Packages
8 Lead PDIP
8 Lead SOIC
Data Sheet No. PD60062 revO