Datasheet

Features
•
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
•
Gate drive supply range from 10 to 20V
•
Undervoltage lockout
•
CMOS Schmitt-triggered inputs with pull-down
• Output in phase with input (IR2117) or out of
phase with input (IR2118)
Description
The IR2117/IR2118(S) is a high voltage, high speed
power MOSFET and IGBT driver. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS outputs. The out-
put driver features a high pulse current buffer stage
designed for minimum cross-conduction. The float-
ing channel can be used to drive an N-channel power
MOSFET or IGBT in the high or low side configura-
tion which operates up to 600 volts.
Preliminary Data Sheet No. PD60146-L
SINGLE CHANNEL DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.) 125 & 105 ns
Packages
Typical Connection
8-Lead PDIP
IR2117/IR2118
8-Lead SOIC
IR2117S/IR2118S
IR2117
IR2118
V
CC
V
B
V
S
HOIN
COM
up to 600V
V
CC
IN
TO
LOAD
V
CC
V
B
V
S
HOIN
COM
up to 600V
V
CC
IN
TO
LOAD
IR2117/IR2118 (S)
www.irf.com 1
(Refer to Lead Assignments for correct pin configuration).
This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for
proper circuit board layout.